Перегляд за автором "Dan’ko, V.A."

Сортувати за: Порядок: Результатів:

  • Dan’ko, V.A.; Bratus, V.Ya.; Indutnyi, I.Z.; Lisovskyy, I.P.; Zlobin, S.O.; Michailovska, K.V.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of HF and H₂O₂ vapor treatment on the spectral composition and intensity of photoluminescence (PL) in porous oblique deposited nc-Si–SiOx structures have been studied using FTIR, electron-spin resonance (EPR) ...
  • Dan’ko, V.A.; Dorozinsky, G.V.; Indutnyi, I.Z.; Myn’ko, V.I.; Ushenin, Yu.V.; Shepeliavyi, P.E.; Lukaniuk, M.V.; Korchovyi, A.A.; Khrystosenko, R.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    This study reports on development of the interference lithography (IL) technique applying the resist based on chalcogenide glass films for fabrication of gold chips in the nform of periodic surface nanostructures for surface ...
  • Michailovska, K.V.; Indutnyi, I.Z.; Shepeliavyi, P.E.; Dan’ko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral ...
  • Dan’ko, V.A.; Indutnyi, I.Z.; Myn’ko, V.I.; Shepeliavyi, P.E.; Lukyanyuk, M.V.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The new effect of photostimulated dissolution of as-evaporated and annealed Ge-based chalcogenide glass (ChG) films was investigated in detail. The etching rate increases with the illumination intensity, and its spectral ...